Fabrication and characterization of Ag-BaF2/GaSb Schottky diode

The Ag-BaF2/GaSb Schottky diode measurement has been investigated by using voltage versus current (I-V) at different temperatures, capacitance (C-V) and hotoelectric measurements on n-type GaSb carrier per cm-3, Current – were used to study the interface layer. Near ideal characteristics observed for contact with ideality factor values (1.21-1.451). barrier height donor concentration (Nd) have obtained from C-V characteristics. Barrier results these methods same approximately in range which suggests that Fermi level is pinned lower half of band gap. Photoelectric applying fowler method. surfaces sample was analyses scanning electron microscopy (SEM) also x-ray investigate reasons non-ideal behavior Ga contacts surface Ag-BaF2 layer air-cleaved n-GaSb surface.